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Silicon wafers hold a crucial role in the production of semiconductor chips, constituting 36% of the global semiconductor market. Their prominence stems from the transition from germanium-based to silicon-based materials in the late 1960s,high voltage probe driven by silicon's advantageous properties, including radiation resistance, high-temperature durability, and enhanced reliability. Currently, over 95% of semiconductor chips and devices are crafted from silicon-based materials.

The stability and reliability of silicon-based materials make them indispensable in various applications, such as sensors, discrete devices, optoelectronics, data storage, processors, analog, and logic circuits. Silicon wafers,wafer chuck serving as the fundamental material for semiconductor production, undergo a meticulous process involving single crystal silicon wafers.

The monocrystalline furnace is a critical component in the silicon wafer pulling process, influencing the size and efficiency of silicon wafers. As the diameter of silicon wafers increases,manual prober the efficiency of producing integrated system circuit control chips rises, subsequently lowering the overall cost of Chinese chips. The growth furnace equipment, essential for analyzing crystal structure growth, constitutes a significant portion (25%) of the total investment in wafer production enterprises.

Semiconductor silicon wafers, categorized as polished wafers, epitaxial wafers, and SOI wafers, cater to diverse applications. Polished wafers serve as the foundation for various silicon products, epitaxial wafers meet specific device performance requirements, and SOI wafers, reducing capacitance and leakage, find application in RF front-end chips, power devices, and automotive electronics.

Differentiated by single crystal growth methods, silicon wafers include CZ wafers, MCZ wafers, and FZ wafers, each playing a distinct role in semiconductor processes. The ongoing progression of semiconductor technology, as per Moore's Law, necessitates stringent control over wafer defect density, defect size, surface roughness, and crystal structure defects in the manufacturing process.

The future trajectory of the silicon wafer industry reflects several trends:

1. The ascendancy of monocrystalline silicon wafers, surpassing polycrystalline wafers in market share.

2. Embrace of large wafers, such as M2 and M4 sizes, to enhance efficiency, increase light-emitting area, and reduce Balance of System (BOS) and Levelized Cost of Electricity (LCOE) costs.

3. Advancements in composites, particularly in the lamination process, with a focus on reducing silicon wafer thickness through diamond wire cutting.

As technology evolves, the economic development of the silicon wafer industry hinges on adapting to these emerging trends, ensuring sustained growth and innovation.